强激光与粒子束2013，Vol.25Issue(8)：2061-2066,6.DOI:10.3788/HPLPB20132508.2061
电磁脉冲作用下PIN二极管的响应
Response of PIN diode to electromagnetic pulse
摘要
Abstract
To study the effect of PIN diode limiter under electromagnetic pulse (EMP),the response of PIN diode is numerically simulated by using self-developed 2D semiconductor device simulation software.Current overshoot phenomena of PIN diode during the rise time of EMP are analyzed.Overshoot current is validated to be due to the capacitive performance of PIN diode under high frequency.Shorter rise time of EMP causes higher peak of current.Overshoot current is affected by doping concentration of PIN diode.The higher doping concentration of the P layer and N layer causes higher peak of current and sooner attenuation of overshoot current.The doping concentration of the I layer also affects the overshoot current,but not as the salient as concentration of the P and N layers.关键词
电磁脉冲/PIN二极管/过冲电流/限幅器Key words
electromagnetic pulse/PIN diode/overshoot current/limiter分类
数理科学引用本文复制引用
李勇,宣春,谢海燕,夏洪富,王建国..电磁脉冲作用下PIN二极管的响应[J].强激光与粒子束,2013,25(8):2061-2066,6.基金项目
国家自然科学基金项目(61231003,61201090) （61231003,61201090）
