Eliminating the floating-body effects in a novel CMOS-compatible thin-SOI LDMOSOACSCDCSTPCD

作者：Jiang Yongheng;Luo Xiaorong;Li Yanfei;Wang Pei;Fan Ye;Zhou Kun;Wang Qi

作者单位：State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, ChinaState Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

中文关键词：thin film SOI LDMOS body contact floating body effect parasitic BJT effect

英文关键词：thin film SOI LDMOS body contact floating body effect parasitic BJT effect

刊名：《半导体学报（英文版）》 2013 (9)

页码/页数：53-57,5

基金：Project supported by the National Natural Science Foundation of China (Nos.61176069,60976060,51308020304).

DOI：10.1088/1674-4926/34/9/094005