半导体学报（英文版）2013，Vol.34Issue(9)：63-66,4.DOI:10.1088/1674-4926/34/9/094007
An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process
An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process
Yu Ting 1Luo Ling2
作者信息
- 1. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
- 2. Xidian University, Xi'an 710126, China
- 折叠
摘要
关键词
PAE/ ruggedness/ RF LDMOS/ CMOS/ output powerKey words
PAE/ ruggedness/ RF LDMOS/ CMOS/ output power引用本文复制引用
Yu Ting,Luo Ling..An RF LDMOS with excellent efficiency and ruggedness based on a modified CMOS process[J].半导体学报（英文版）,2013,34(9):63-66,4.
