首页|期刊导航|半导体学报（英文版）|Reduced defect density in microcrystalline silicon by hydrogen plasma treatment

Reduced defect density in microcrystalline silicon by hydrogen plasma treatment

Li Jingyan Zeng Xiangbo Li Hao Xie Xiaobing Yang Ping Xiao Haibo Zhang Xiaodong

半导体学报（英文版）2013，Vol.34Issue(10)：36-38,3.

半导体学报（英文版）2013，Vol.34Issue(10)：36-38,3.DOI:10.1088/1674-4926/34/10/103006

Reduced defect density in microcrystalline silicon by hydrogen plasma treatment

Li Jingyan ¹Zeng Xiangbo ¹Li Hao ¹Xie Xiaobing ¹Yang Ping ¹Xiao Haibo ¹Zhang Xiaodong¹

作者信息

1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China
折叠

摘要

关键词

microcrystalline silicon/ defect density/ hydrogen plasma treatment/ passivation

Key words

microcrystalline silicon/ defect density/ hydrogen plasma treatment/ passivation

引用本文复制引用

Li Jingyan,Zeng Xiangbo,Li Hao,Xie Xiaobing,Yang Ping,Xiao Haibo,Zhang Xiaodong..Reduced defect density in microcrystalline silicon by hydrogen plasma treatment[J].半导体学报（英文版）,2013,34(10):36-38,3.

基金项目

Project supported by the National High Technology Research and Development Program of China (No.2011AA050504),the National Natural Science Foundation of China (No.51072194),and the Key Laboratory of Nanodevices and Applications,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences (No.12JG01). （No.2011AA050504）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航