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Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors

Wan Xiaojia Wang Xiaoliang Xiao Hongling Feng Chun Jiang Lijuan Qu Shenqi Wang Zhanguo

半导体学报（英文版）2013，Vol.34Issue(10)：43-45,3.

半导体学报（英文版）2013，Vol.34Issue(10)：43-45,3.DOI:10.1088/1674-4926/34/10/104002

Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors

Wan Xiaojia ¹Wang Xiaoliang ²Xiao Hongling ¹Feng Chun ²Jiang Lijuan ³Qu Shenqi ¹Wang Zhanguo²

作者信息

1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences,Beijing 100083, China
2. Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
3. ISCAS-XJTU Joint Laboratory of Functional Materials and Devices for Informatics, Beijing 100083, China
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摘要

关键词

AlGaN/GaN HEMT/ InGaN/ current collapse/ surface states

Key words

AlGaN/GaN HEMT/ InGaN/ current collapse/ surface states

引用本文复制引用

Wan Xiaojia,Wang Xiaoliang,Xiao Hongling,Feng Chun,Jiang Lijuan,Qu Shenqi,Wang Zhanguo..Investigation of the current collapse induced in InGaN back barrier AlGaN/GaN high electron mobility transistors[J].半导体学报（英文版）,2013,34(10):43-45,3.

基金项目

Project supported by the Knowledge Innovation Engineering of the Chinese Academy of Sciences (No.YYY-0701-02),the National Natural Science Foundation of China (Nos.60890193,61106014),the State Key Development Program for Basic Research of China (No.2010CB327503),and the National Science and Technology Major Project. （No.YYY-0701-02）

半导体学报（英文版）

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ISSN：1674-4926

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