首页|期刊导航|半导体学报（英文版）|Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography

Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography

Zhao Linghui Wei Tongbo Wang Junxi Yan Qingfeng Zeng Yiping Li Jinmin

半导体学报（英文版）2013，Vol.34Issue(10)：57-61,5.

半导体学报（英文版）2013，Vol.34Issue(10)：57-61,5.DOI:10.1088/1674-4926/34/10/104005

Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography

Zhao Linghui ¹Wei Tongbo ¹Wang Junxi ¹Yan Qingfeng ²Zeng Yiping ¹Li Jinmin¹

作者信息

1. Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2. Department of Chemistry, Tsinghua University, Beijing 100084, China
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摘要

关键词

LED/ light extraction/ photonic crystal/ nanospherical-lens photolithography

Key words

LED/ light extraction/ photonic crystal/ nanospherical-lens photolithography

引用本文复制引用

Zhao Linghui,Wei Tongbo,Wang Junxi,Yan Qingfeng,Zeng Yiping,Li Jinmin..Enhanced light extraction of InGaN LEDs with photonic crystals grown on p-GaN using selective-area epitaxy and nanospherical-lens photolithography[J].半导体学报（英文版）,2013,34(10):57-61,5.

基金项目

Project supported by the National Natural Science Foundation of China (No.61274040),the National Basic Research Program of China (No.2011CB301902),and the National High Technology R&D Program of China (Nos.2011AA03A105,2011AA03A103). （No.61274040）

半导体学报（英文版）

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ISSN：1674-4926

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