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Ni(Pt) germanosilicide contacts formed on heavily boron doped Si1-x Gex substrates for Schottky source/drain transistors

Xiang Wenfeng Liu Kun Zhao Kun Zhong Shouxian

半导体学报（英文版）2013，Vol.34Issue(12)：26-29,4.

半导体学报（英文版）2013，Vol.34Issue(12)：26-29,4.DOI:10.1088/1674-4926/34/12/123002

Ni(Pt) germanosilicide contacts formed on heavily boron doped Si1-x Gex substrates for Schottky source/drain transistors

Xiang Wenfeng ¹Liu Kun ²Zhao Kun ¹Zhong Shouxian¹

作者信息

1. College of Science, China University of Petroleum, Beijing 102249, China
2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
折叠

摘要

关键词

specific contact resistivity/ Ni(Pt) germanosilicide/ Ge fraction/ doping concentration

Key words

specific contact resistivity/ Ni(Pt) germanosilicide/ Ge fraction/ doping concentration

引用本文复制引用

Xiang Wenfeng,Liu Kun,Zhao Kun,Zhong Shouxian..Ni(Pt) germanosilicide contacts formed on heavily boron doped Si1-x Gex substrates for Schottky source/drain transistors[J].半导体学报（英文版）,2013,34(12):26-29,4.

基金项目

Project supported by the National Natural Science Foundation of China (No.11004251) and the Development Foundation of China University of Petroleum (Beijing) (No.01JB021). （No.11004251）

半导体学报（英文版）

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ISSN：1674-4926

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