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Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters

Wang Xin Lu Wu Guo Qi Wu Xue Xi Shanbin Deng Wei Cui Jiangwei

半导体学报(英文版)2013,Vol.34Issue(12):53-59,7.
半导体学报(英文版)2013,Vol.34Issue(12):53-59,7.DOI:10.1088/1674-4926/34/12/124006

Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters

Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters

Wang Xin 1Lu Wu 2Guo Qi 3Wu Xue 1Xi Shanbin 2Deng Wei 1Cui Jiangwei2

作者信息

  • 1. Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
  • 2. Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China
  • 3. University of Chinese Academy of Sciences, Beijing 100049, China
  • 折叠

摘要

关键词

digital-to-analog/ CBCMOS/ dose rate effect/ ionizing radiation

Key words

digital-to-analog/ CBCMOS/ dose rate effect/ ionizing radiation

引用本文复制引用

Wang Xin,Lu Wu,Guo Qi,Wu Xue,Xi Shanbin,Deng Wei,Cui Jiangwei..Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters[J].半导体学报(英文版),2013,34(12):53-59,7.

半导体学报(英文版)

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1674-4926

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