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W-band high output power Schottky diode doublers with quartz substrate

Yao Changfei Zhou Ming Luo Yunsheng Li Jiao Xu Conghai

半导体学报(英文版)2013,Vol.34Issue(12):77-81,5.
半导体学报(英文版)2013,Vol.34Issue(12):77-81,5.DOI:10.1088/1674-4926/34/12/125004

W-band high output power Schottky diode doublers with quartz substrate

W-band high output power Schottky diode doublers with quartz substrate

Yao Changfei 1Zhou Ming 2Luo Yunsheng 2Li Jiao 2Xu Conghai2

作者信息

  • 1. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
  • 2. Department of Microwave and Millimeter Wave Modules, Nanjing Electronic Devices Institute, Nanjing 210016, China
  • 折叠

摘要

关键词

high output power/ frequency doubler/ planar Schottky diode/ efficiency

Key words

high output power/ frequency doubler/ planar Schottky diode/ efficiency

引用本文复制引用

Yao Changfei,Zhou Ming,Luo Yunsheng,Li Jiao,Xu Conghai..W-band high output power Schottky diode doublers with quartz substrate[J].半导体学报(英文版),2013,34(12):77-81,5.

半导体学报(英文版)

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1674-4926

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