首页|期刊导航|半导体学报（英文版）|Influence of incident angle on the defect mode of locally doped photonic crystal

Influence of incident angle on the defect mode of locally doped photonic crystal

Wang Jin Wen Tingdun Xu Liping Liu Zufan

半导体学报（英文版）2013，Vol.34Issue(11)：11-14,4.

半导体学报（英文版）2013，Vol.34Issue(11)：11-14,4.DOI:10.1088/1674-4926/34/11/112003

Influence of incident angle on the defect mode of locally doped photonic crystal

Wang Jin ¹Wen Tingdun ¹Xu Liping ¹Liu Zufan²

作者信息

1. Department of Physics, North University of China, Taiyuan 030051, China
2. China Aviation Lithium Battery Co., Ltd, Luoyang 471000, China
折叠

摘要

关键词

photonic crystal/ defect mode/ incident angle/ locally doped/ transfer matrix method

Key words

photonic crystal/ defect mode/ incident angle/ locally doped/ transfer matrix method

引用本文复制引用

Wang Jin,Wen Tingdun,Xu Liping,Liu Zufan..Influence of incident angle on the defect mode of locally doped photonic crystal[J].半导体学报（英文版）,2013,34(11):11-14,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.60776062,50730009). （Nos.60776062,50730009）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航