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Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects

P.Vimala N.B.Balamurugan

半导体学报（英文版）2013，Vol.34Issue(11)：25-30,6.

半导体学报（英文版）2013，Vol.34Issue(11)：25-30,6.DOI:10.1088/1674-4926/34/11/114001

Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects

P.Vimala ¹N.B.Balamurugan¹

作者信息

1. Department of Electronics and Communication Engineering, Thiagarajar College of Engineering, Madurai-625015,Tamilnadu, India
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摘要

关键词

surrounding gate MOSFETs/ energy quantization/ centroid/ inversion charge density

Key words

surrounding gate MOSFETs/ energy quantization/ centroid/ inversion charge density

引用本文复制引用

P.Vimala,N.B.Balamurugan..Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effects[J].半导体学报（英文版）,2013,34(11):25-30,6.

基金项目

The authors would like to thank the financial support by WOS-A Scheme,Department of Science and Technology,New Delhi,Government of India through the grant SR/WOS-A/ET-41/2011. （）

半导体学报（英文版）

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ISSN：1674-4926

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