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Improved memory performance of metal-oxide-nitride-oxide-silicon by annealing the SiO2 tunnel layer in different nitridation atmospheres

He Meilin Xu Jingping Chen Jianxiong Liu Lu

半导体学报（英文版）2013，Vol.34Issue(11)：45-48,4.

半导体学报（英文版）2013，Vol.34Issue(11)：45-48,4.DOI:10.1088/1674-4926/34/11/114005

Improved memory performance of metal-oxide-nitride-oxide-silicon by annealing the SiO2 tunnel layer in different nitridation atmospheres

He Meilin ¹Xu Jingping ¹Chen Jianxiong ¹Liu Lu¹

作者信息

1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
折叠

摘要

关键词

MONOS memory/ memory characteristics/ annealing/ nitridation

Key words

MONOS memory/ memory characteristics/ annealing/ nitridation

引用本文复制引用

He Meilin,Xu Jingping,Chen Jianxiong,Liu Lu..Improved memory performance of metal-oxide-nitride-oxide-silicon by annealing the SiO2 tunnel layer in different nitridation atmospheres[J].半导体学报（英文版）,2013,34(11):45-48,4.

基金项目

Project supported by the National Natural Science Foundation of China (No.60976091). （No.60976091）

半导体学报（英文版）

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ISSN：1674-4926

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