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Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer

Li Shaolan Zhang Lichun

半导体学报（英文版）2013，Vol.34Issue(11)：65-69,5.

半导体学报（英文版）2013，Vol.34Issue(11)：65-69,5.DOI:10.1088/1674-4926/34/11/114010

Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer

Li Shaolan ¹Zhang Lichun²

作者信息

1. Editorial Department, Ludong University, Yantai 264025, China
2. School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China
折叠

摘要

关键词

light emitting diode/ electroluminescence/ heterojunction/ ZnO nanorods

Key words

light emitting diode/ electroluminescence/ heterojunction/ ZnO nanorods

引用本文复制引用

Li Shaolan,Zhang Lichun..Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayer[J].半导体学报（英文版）,2013,34(11):65-69,5.

基金项目

Project supported by the National Natural Science Foundation of China (No.11144010). （No.11144010）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

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