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A first-principle investigation of the oxygen defects in Si3N4-based charge trapping memories

Luo Jing Lu Jinlong Zhao Hongpeng Dai Yuehua Liu Qi Yang Jin Jiang Xianwei

半导体学报（英文版）2014，Vol.35Issue(1)：40-45,6.

半导体学报（英文版）2014，Vol.35Issue(1)：40-45,6.DOI:10.1088/1674-4926/35/1/014004

A first-principle investigation of the oxygen defects in Si3N4-based charge trapping memories

Luo Jing ¹Lu Jinlong ¹Zhao Hongpeng ¹Dai Yuehua ¹Liu Qi ²Yang Jin ¹Jiang Xianwei¹

作者信息

1. School of Electronics and Information Engineering, Anhui University, Hefei 230601, China
2. Laboratory of Nano-Fabrication and Novel Device Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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摘要

关键词

charge trapping memory/ silicon nitride/ substitutional oxygen/ capturing property/ first-principle

Key words

charge trapping memory/ silicon nitride/ substitutional oxygen/ capturing property/ first-principle

引用本文复制引用

Luo Jing,Lu Jinlong,Zhao Hongpeng,Dai Yuehua,Liu Qi,Yang Jin,Jiang Xianwei..A first-principle investigation of the oxygen defects in Si3N4-based charge trapping memories[J].半导体学报（英文版）,2014,35(1):40-45,6.

基金项目

Project supported by the National Youth Science Foundation of China (No.61006064). （No.61006064）

半导体学报（英文版）

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ISSN：1674-4926

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