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Design of two-terminal PNPN diode for high-density and high-speed memory applications

Tong Xiaodong Wu Hao Liang Qingqing Zhong Huicai Zhu Huilong Zhao Chao Ye Tianchun

半导体学报(英文版)2014,Vol.35Issue(1):51-55,5.
半导体学报(英文版)2014,Vol.35Issue(1):51-55,5.DOI:10.1088/1674-4926/35/1/014006

Design of two-terminal PNPN diode for high-density and high-speed memory applications

Design of two-terminal PNPN diode for high-density and high-speed memory applications

Tong Xiaodong 1Wu Hao 1Liang Qingqing 1Zhong Huicai 1Zhu Huilong 1Zhao Chao 1Ye Tianchun1

作者信息

  • 1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 折叠

摘要

关键词

PNPN diode/ memory cell/ high-density

Key words

PNPN diode/ memory cell/ high-density

引用本文复制引用

Tong Xiaodong,Wu Hao,Liang Qingqing,Zhong Huicai,Zhu Huilong,Zhao Chao,Ye Tianchun..Design of two-terminal PNPN diode for high-density and high-speed memory applications[J].半导体学报(英文版),2014,35(1):51-55,5.

半导体学报(英文版)

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1674-4926

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