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Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs

Wang Chong Chen Chong He Yunlong Zheng Xuefeng Ma Xiaohua Zhang Jincheng Mao Wei

半导体学报（英文版）2014，Vol.35Issue(1)：61-64,4.

半导体学报（英文版）2014，Vol.35Issue(1)：61-64,4.DOI:10.1088/1674-4926/35/1/014008

Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs

Wang Chong ¹Chen Chong ¹He Yunlong ¹Zheng Xuefeng ¹Ma Xiaohua ¹Zhang Jincheng ¹Mao Wei¹

作者信息

1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xi'an 710071, China
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摘要

关键词

high electron mobility transistors/ AlGaN/GaN/ breakdown voltage/ current collapse

Key words

high electron mobility transistors/ AlGaN/GaN/ breakdown voltage/ current collapse

引用本文复制引用

Wang Chong,Chen Chong,He Yunlong,Zheng Xuefeng,Ma Xiaohua,Zhang Jincheng,Mao Wei..Breakdown voltage and current collapse of F-plasma treated AlGaN/GaN HEMTs[J].半导体学报（英文版）,2014,35(1):61-64,4.

基金项目

Project supported by the National Natural Science Foundation of China (No.61106106),the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (No.ZHD201206),and the Fundamental Research Funds for the Central Universities (Nos.K5051325004,K5051325002). （No.61106106）

半导体学报（英文版）

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ISSN：1674-4926

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