An InGaAs graded buffer layer in solar cells

Qu Xiaosheng Bao Hongyin Hanieh.S.Nikjalal Xiong Liling Zhen Hongxin

半导体学报（英文版）2014，Vol.35Issue(1)：74-77,4.

半导体学报（英文版）2014，Vol.35Issue(1)：74-77,4.DOI:10.1088/1674-4926/35/1/014011

Qu Xiaosheng ¹Bao Hongyin ¹Hanieh.S.Nikjalal ¹Xiong Liling ¹Zhen Hongxin¹

作者信息

1. Institute of Electronic Information Engineering, Beihang University, Beijing 100191, China
折叠

solar cells/ lattice mismatch/ graded buffer layer/ threading dislocation/ carrier lifetime

solar cells/ lattice mismatch/ graded buffer layer/ threading dislocation/ carrier lifetime

Qu Xiaosheng,Bao Hongyin,Hanieh.S.Nikjalal,Xiong Liling,Zhen Hongxin..An InGaAs graded buffer layer in solar cells[J].半导体学报（英文版）,2014,35(1):74-77,4.

Project supported by the National Natural Science Foundation of China (No.61232009). （No.61232009）

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ISSN：1674-4926

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