首页|期刊导航|半导体学报（英文版）|A low power discrete operation mode for punchthrough phototransistor

A low power discrete operation mode for punchthrough phototransistor

Zhou Quan Guo Shuxu Song Jingyi Li Zhaohan Du Guotong Chang Yuchun

半导体学报（英文版）2013，Vol.34Issue(7)：102-105,4.

半导体学报（英文版）2013，Vol.34Issue(7)：102-105,4.DOI:10.1088/1674-4926/34/7/074010

A low power discrete operation mode for punchthrough phototransistor

Zhou Quan ¹Guo Shuxu ¹Song Jingyi ¹Li Zhaohan ¹Du Guotong ¹Chang Yuchun¹

作者信息

1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University,Changchun 130012, China
折叠

摘要

关键词

punchthrough (PT) phototransistor/ discrete operation mode/ low power/ high responsivity

Key words

punchthrough (PT) phototransistor/ discrete operation mode/ low power/ high responsivity

引用本文复制引用

Zhou Quan,Guo Shuxu,Song Jingyi,Li Zhaohan,Du Guotong,Chang Yuchun..A low power discrete operation mode for punchthrough phototransistor[J].半导体学报（英文版）,2013,34(7):102-105,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.61076046,61274023),the New Century Excellent Talents Support Program of the Ministry of Education,the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (No.ZHD201204). （Nos.61076046,61274023）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航