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A novel NLDMOS with a high ballast resistance for ESD protection

Fan Hang Zhang Bo

半导体学报（英文版）2014，Vol.35Issue(2)：47-50,4.

半导体学报（英文版）2014，Vol.35Issue(2)：47-50,4.DOI:10.1088/1674-4926/35/2/024005

Fan Hang ¹Zhang Bo¹

作者信息

1. State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
折叠

electro-static discharge/ ballast resistance/ LDMOS

electro-static discharge/ ballast resistance/ LDMOS

Fan Hang,Zhang Bo..A novel NLDMOS with a high ballast resistance for ESD protection[J].半导体学报（英文版）,2014,35(2):47-50,4.

Project supported by the Important National S&T Special Project of China (No.2010ZX02201-003-002). （No.2010ZX02201-003-002）

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ISSN：1674-4926

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