首页|期刊导航|半导体学报（英文版）|Experimental and theoretical study of an improved breakdown voltage SOILDMOS with a reduced cell pitch

Experimental and theoretical study of an improved breakdown voltage SOILDMOS with a reduced cell pitch

Luo Xiaorong Wang Xiaowei Hu Gangyi Fan Yuanhang Zhou Kun Luo Yinchun Fan Ye

半导体学报（英文版）2014，Vol.35Issue(2)：57-61,5.

半导体学报（英文版）2014，Vol.35Issue(2)：57-61,5.DOI:10.1088/1674-4926/35/2/024007

Experimental and theoretical study of an improved breakdown voltage SOILDMOS with a reduced cell pitch

Luo Xiaorong ¹Wang Xiaowei ²Hu Gangyi ²Fan Yuanhang ¹Zhou Kun ²Luo Yinchun ²Fan Ye²

作者信息

1. Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China
2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
折叠

摘要

关键词

MOSFET/ SOI/ breakdown voltage/ trench gate

Key words

MOSFET/ SOI/ breakdown voltage/ trench gate

引用本文复制引用

Luo Xiaorong,Wang Xiaowei,Hu Gangyi,Fan Yuanhang,Zhou Kun,Luo Yinchun,Fan Ye..Experimental and theoretical study of an improved breakdown voltage SOILDMOS with a reduced cell pitch[J].半导体学报（英文版）,2014,35(2):57-61,5.

基金项目

Projects supported by the National Natural Science Foundation of China (No.61176069),and the Special Financial Gnants from the China Postdoctoral Science Foundation and Chongqing (Nos.2012T50771,XM2012004). （No.61176069）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

访问量0

下载量0

段落导航