半导体学报（英文版）2014，Vol.35Issue(2)：67-71,5.DOI:10.1088/1674-4926/35/2/024009
Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode
Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode
Liu Yu'an 1Lou Wenlang1
作者信息
- 1. School of Electronics & Information Engineering, Jinggangshan University, Ji'an 343009, China
- 折叠
摘要
关键词
random telegraph signal noise/ defect/ AlGaInP/ laser diodeKey words
random telegraph signal noise/ defect/ AlGaInP/ laser diode引用本文复制引用
Liu Yu'an,Lou Wenlang..Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode[J].半导体学报（英文版）,2014,35(2):67-71,5.
