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Effects of defect states on the performance of CuInGaSe2 solar cells

Wan Fucheng Tang Fuling Xue Hongtao Lu Wenjiang Feng Yudong Rui Zhiyuan

半导体学报（英文版）2014，Vol.35Issue(2)：76-81,6.

半导体学报（英文版）2014，Vol.35Issue(2)：76-81,6.DOI:10.1088/1674-4926/35/2/024011

Effects of defect states on the performance of CuInGaSe2 solar cells

Wan Fucheng ¹Tang Fuling ¹Xue Hongtao ²Lu Wenjiang ¹Feng Yudong ¹Rui Zhiyuan²

作者信息

1. State Key Laboratory of Gansu Advanced Non-ferrous Metal Materials, Department of Materials Science and Engineering,Lanzhou University of Technology, Lanzhou 730050, China
2. Science and Technology on Surface Engineering Laboratory, Lanzhou Institute of Physics, Lanzhou 730000, China
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摘要

关键词

device modeling/ defect states/ solar cell/ conversion efficiency

Key words

device modeling/ defect states/ solar cell/ conversion efficiency

引用本文复制引用

Wan Fucheng,Tang Fuling,Xue Hongtao,Lu Wenjiang,Feng Yudong,Rui Zhiyuan..Effects of defect states on the performance of CuInGaSe2 solar cells[J].半导体学报（英文版）,2014,35(2):76-81,6.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.11164014,11364025,51065014) and the Science and Technology Pillar Program of Gansu Province (No.1204GKCA057). （Nos.11164014,11364025,51065014）

半导体学报（英文版）

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ISSN：1674-4926

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