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Explicit solution of channel potential and drain current model in symmetric double-gate polysilicon TFTs

Ma Xiaoyu Deng Wanling Huang Junkai

半导体学报（英文版）2014，Vol.35Issue(3)：5-10,6.

半导体学报（英文版）2014，Vol.35Issue(3)：5-10,6.DOI:10.1088/1674-4926/35/3/032002

Explicit solution of channel potential and drain current model in symmetric double-gate polysilicon TFTs

Ma Xiaoyu ¹Deng Wanling ¹Huang Junkai¹

作者信息

1. Department of Electronic Engineering, Jinan University, Guangzhou 510630, China
折叠

摘要

关键词

double-gate/ drain current/ surface potential/ polysilicon thin-film transistor

Key words

double-gate/ drain current/ surface potential/ polysilicon thin-film transistor

引用本文复制引用

Ma Xiaoyu,Deng Wanling,Huang Junkai..Explicit solution of channel potential and drain current model in symmetric double-gate polysilicon TFTs[J].半导体学报（英文版）,2014,35(3):5-10,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.61204100) and the Guangdong Natural Science Foundation (No.S2013010013088). （No.61204100）

半导体学报（英文版）

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ISSN：1674-4926

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