半导体学报（英文版）2014，Vol.35Issue(3)：33-38,6.DOI:10.1088/1674-4926/35/3/034004
Backgating effect in GaAs FETs with a channel-semi-insulating substrate boundary
Backgating effect in GaAs FETs with a channel-semi-insulating substrate boundary
Ahmed Chaouki Megherbi 1Said Benramache 2Abderrazak Guettaf1
作者信息
- 1. Electrical Engineering Department, Faculty of Technology, University of Biskra, Algeria
- 2. Material Sciences Department, Faculty of Sciences, University of Biskra, Algeria
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摘要
关键词
traps/ pinch-off voltage/ resistance/ channel substrate interfaceKey words
traps/ pinch-off voltage/ resistance/ channel substrate interface引用本文复制引用
Ahmed Chaouki Megherbi,Said Benramache,Abderrazak Guettaf..Backgating effect in GaAs FETs with a channel-semi-insulating substrate boundary[J].半导体学报（英文版）,2014,35(3):33-38,6.
