半导体学报（英文版）2014，Vol.35Issue(3)：70-78,9.DOI:10.1088/1674-4926/35/3/034010
A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs
A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs
Liu Jun 1Yu Zhiping 1Sun Lingling1
作者信息
- 1. Key Laboratory of RF Circuits and Systems, Ministry of Education, Hangzhou Dianzi University, Hangzhou 310037, China
- 折叠
摘要
关键词
surface-potential based/ compound semiconductor HEMTs/ large-signal/ modelKey words
surface-potential based/ compound semiconductor HEMTs/ large-signal/ model引用本文复制引用
Liu Jun,Yu Zhiping,Sun Lingling..A complete and accurate surface-potential based large-signal model for compound semiconductor HEMTs[J].半导体学报（英文版）,2014,35(3):70-78,9.
