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An L-shaped low on-resistance current path SOI LDMOS with dielectric field enhancement

Fan Ye Luo Xiaorong Zhou Kun Fan Yuanhang Jiang Yongheng Wang Qi Wang Pei

半导体学报（英文版）2014，Vol.35Issue(3)：79-84,6.

半导体学报（英文版）2014，Vol.35Issue(3)：79-84,6.DOI:10.1088/1674-4926/35/3/034011

An L-shaped low on-resistance current path SOI LDMOS with dielectric field enhancement

Fan Ye ¹Luo Xiaorong ¹Zhou Kun ¹Fan Yuanhang ¹Jiang Yongheng ¹Wang Qi ¹Wang Pei¹

作者信息

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
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摘要

关键词

MOSFET/ silicon-on-insulator/ breakdown voltage/ specific on-resistance

Key words

MOSFET/ silicon-on-insulator/ breakdown voltage/ specific on-resistance

引用本文复制引用

Fan Ye,Luo Xiaorong,Zhou Kun,Fan Yuanhang,Jiang Yongheng,Wang Qi,Wang Pei..An L-shaped low on-resistance current path SOI LDMOS with dielectric field enhancement[J].半导体学报（英文版）,2014,35(3):79-84,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.61176069),the Program for New Century Excellent Talents in University of Ministry of Education of China (No.NCET-11-0062),and the China Postdoctoral Science Foundation (No.2012T50771). （No.61176069）

半导体学报（英文版）

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ISSN：1674-4926

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