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High efficiency modeling of broadband millimeter-wave CMOS FETs with gate width scalability by using pre-modeled cells

Tang Yang Ye Zuochang Wang Yan

半导体学报（英文版）2014，Vol.35Issue(3)：85-90,6.

半导体学报（英文版）2014，Vol.35Issue(3)：85-90,6.DOI:10.1088/1674-4926/35/3/034012

High efficiency modeling of broadband millimeter-wave CMOS FETs with gate width scalability by using pre-modeled cells

Tang Yang ¹Ye Zuochang ¹Wang Yan¹

作者信息

1. Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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摘要

关键词

CMOS MOSFETs/ layout/ millimeter-wave/ scalable model

Key words

CMOS MOSFETs/ layout/ millimeter-wave/ scalable model

引用本文复制引用

Tang Yang,Ye Zuochang,Wang Yan..High efficiency modeling of broadband millimeter-wave CMOS FETs with gate width scalability by using pre-modeled cells[J].半导体学报（英文版）,2014,35(3):85-90,6.

基金项目

Project supported by the Major State Basic Research Development Program of China (No.2010CB327403). （No.2010CB327403）

半导体学报（英文版）

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ISSN：1674-4926

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