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Effect of guanidine hydrochloride on removal rate selectivity and wafer topography modification in barrier CMP

Li Hailong Kang Jin Liu Yuling Wang Chenwei Liu Hong Gao Jiaojiao

半导体学报（英文版）2014，Vol.35Issue(3)：163-168,6.

半导体学报（英文版）2014，Vol.35Issue(3)：163-168,6.DOI:10.1088/1674-4926/35/3/036002

Effect of guanidine hydrochloride on removal rate selectivity and wafer topography modification in barrier CMP

Li Hailong ¹Kang Jin ²Liu Yuling ¹Wang Chenwei ¹Liu Hong ³Gao Jiaojiao¹

作者信息

1. Institute of Microelectronics, Hebei University of Technology, Tianjin 300130, China
2. Semiconductor Manufacturing International(Beijing)Corp, Beijing 100176, China
3. School of Economics and Management, Hebei University of Technology, Tianjin 300400, China
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摘要

关键词

Guanidine hydrochloride/ selectivity/ dishing/ barrier layer/ CMP

Key words

Guanidine hydrochloride/ selectivity/ dishing/ barrier layer/ CMP

引用本文复制引用

Li Hailong,Kang Jin,Liu Yuling,Wang Chenwei,Liu Hong,Gao Jiaojiao..Effect of guanidine hydrochloride on removal rate selectivity and wafer topography modification in barrier CMP[J].半导体学报（英文版）,2014,35(3):163-168,6.

基金项目

Project supported by the Major National Science and Technology Special Projects (No.2009ZX02308),the Tianjin Natural Science Foundation of China (No.10JCZDJC15500),and the Fund Project of Hebei Provincial Department of Education,China (No.2011128). （No.2009ZX02308）

半导体学报（英文版）

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ISSN：1674-4926

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