半导体学报（英文版）2014，Vol.35Issue(4)：52-55,4.DOI:10.1088/1674-4926/35/4/044002
DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment
DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment
Song Xubo 1Gu Guodong 1Dun Shaobo 1Lü Yuanjie 1Han Tingting 1Wang Yuangang 1Xu Peng1
作者信息
- 1. National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
- 折叠
摘要
关键词
enhancement-mode/ InAlN/GaN HEMT/ threshold voltage/ fluorine treatment/ small-signal modelKey words
enhancement-mode/ InAlN/GaN HEMT/ threshold voltage/ fluorine treatment/ small-signal model引用本文复制引用
Song Xubo,Gu Guodong,Dun Shaobo,Lü Yuanjie,Han Tingting,Wang Yuangang,Xu Peng..DC and RF characteristics of enhancement-mode InAlN/GaN HEMT with fluorine treatment[J].半导体学报（英文版）,2014,35(4):52-55,4.
