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3-D simulation of angled strike heavy-ion induced charge collection in silicon-germanium heterojunction bipolar transistors

Zhang Jinxin Guo Hongxia Wen Lin Guo Qi Cui Jiangwei Wang Xin Deng Wei

半导体学报（英文版）2014，Vol.35Issue(4)：56-61,6.

半导体学报（英文版）2014，Vol.35Issue(4)：56-61,6.DOI:10.1088/1674-4926/35/4/044003

3-D simulation of angled strike heavy-ion induced charge collection in silicon-germanium heterojunction bipolar transistors

Zhang Jinxin ¹Guo Hongxia ²Wen Lin ¹Guo Qi ³Cui Jiangwei ¹Wang Xin ²Deng Wei⁴

作者信息

1. Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
2. University of Chinese Academy of Sciences, Beijing 100049, China
3. Northwest Institution of Nuclear Technology, Xi'an 710024, China
4. Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
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摘要

关键词

SiGe heterojunction bipolar transistors/ single-event effects/ angled strike/ three-dimensional numerical simulation

Key words

SiGe heterojunction bipolar transistors/ single-event effects/ angled strike/ three-dimensional numerical simulation

引用本文复制引用

Zhang Jinxin,Guo Hongxia,Wen Lin,Guo Qi,Cui Jiangwei,Wang Xin,Deng Wei..3-D simulation of angled strike heavy-ion induced charge collection in silicon-germanium heterojunction bipolar transistors[J].半导体学报（英文版）,2014,35(4):56-61,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.61274106). （No.61274106）

半导体学报（英文版）

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ISSN：1674-4926

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