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The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeOI MOSFETs

Fan Minmin Xu Jingping Liu Lu Bai Yurong

半导体学报（英文版）2014，Vol.35Issue(4)：62-67,6.

半导体学报（英文版）2014，Vol.35Issue(4)：62-67,6.DOI:10.1088/1674-4926/35/4/044004

The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeOI MOSFETs

Fan Minmin ¹Xu Jingping ¹Liu Lu ¹Bai Yurong¹

作者信息

1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
折叠

摘要

关键词

GeOI MOSFET/ quantum confinement/ subthreshold slope/ threshold voltage

Key words

GeOI MOSFET/ quantum confinement/ subthreshold slope/ threshold voltage

引用本文复制引用

Fan Minmin,Xu Jingping,Liu Lu,Bai Yurong..The impact of quantum confinement on the electrical characteristics of ultrathin-channel GeOI MOSFETs[J].半导体学报（英文版）,2014,35(4):62-67,6.

基金项目

Project supported by the National Natural Science Foundation of China (No.61274112). （No.61274112）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

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