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Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer

Lu Feiping Peng Yingquan Xing Yongzhong

半导体学报（英文版）2014，Vol.35Issue(4)：68-76,9.

半导体学报（英文版）2014，Vol.35Issue(4)：68-76,9.DOI:10.1088/1674-4926/35/4/044005

Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer

Lu Feiping ¹Peng Yingquan ²Xing Yongzhong¹

作者信息

1. College of Physics and Information Science, Tianshui Normal University, Tianshui 741000, China
2. Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
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摘要

关键词

tandem organic light-emitting diodes/ numerical model/ interconnector layer/ transition metal oxide

Key words

tandem organic light-emitting diodes/ numerical model/ interconnector layer/ transition metal oxide

引用本文复制引用

Lu Feiping,Peng Yingquan,Xing Yongzhong..Numerical model of tandem organic light-emitting diodes based on a transition metal oxide interconnector layer[J].半导体学报（英文版）,2014,35(4):68-76,9.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.11265013,11264033),the Research Fund for the Doctoral Program of Higher Education of China (No.20110211110005),and the Science Research Foundation of Tianshui Normal University (No.TSA1108). （Nos.11265013,11264033）

半导体学报（英文版）

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ISSN：1674-4926

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