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The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters

Wu Xue Lu Wu Li Yudong Guo Qi Wang Xin Zhang Xingyao Yu Xin

半导体学报（英文版）2014，Vol.35Issue(4)：87-91,5.

半导体学报（英文版）2014，Vol.35Issue(4)：87-91,5.DOI:10.1088/1674-4926/35/4/044008

The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters

Wu Xue ¹Lu Wu ²Li Yudong ³Guo Qi ¹Wang Xin ⁴Zhang Xingyao ⁵Yu Xin¹

作者信息

1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
2. Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
3. University of Chinese Academy of Sciences, Beijing 100049, China
4. Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
折叠

摘要

关键词

ionizing radiation/ analog-to-digital converter/ different biases/ dose-rate effects

Key words

ionizing radiation/ analog-to-digital converter/ different biases/ dose-rate effects

引用本文复制引用

Wu Xue,Lu Wu,Li Yudong,Guo Qi,Wang Xin,Zhang Xingyao,Yu Xin..The total ionizing dose effect in 12-bit, 125 MSPS analog-to-digital converters[J].半导体学报（英文版）,2014,35(4):87-91,5.

基金项目

Project supported by the National Natural Science Foundation of China (No.11005152). （No.11005152）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

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