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Active quenching circuit for a InGaAs single-photon avalanche diode

Zheng Lixia Wu Jin Shi Longxing Xi Shuiqing Liu Siyang Sun Weifeng

半导体学报（英文版）2014，Vol.35Issue(4)：151-156,6.

半导体学报（英文版）2014，Vol.35Issue(4)：151-156,6.DOI:10.1088/1674-4926/35/4/045011

Active quenching circuit for a InGaAs single-photon avalanche diode

Zheng Lixia ¹Wu Jin ²Shi Longxing ³Xi Shuiqing ²Liu Siyang ³Sun Weifeng²

作者信息

1. Wuxi Branch, Southeast University, Wuxi 214135, China
2. National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China
3. Wuxi Branch, Southeast University, Wuxi 214135, China
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摘要

关键词

single-photon avalanche diode (SPAD)/ active quenching circuit/ gated operation

Key words

single-photon avalanche diode (SPAD)/ active quenching circuit/ gated operation

引用本文复制引用

Zheng Lixia,Wu Jin,Shi Longxing,Xi Shuiqing,Liu Siyang,Sun Weifeng..Active quenching circuit for a InGaAs single-photon avalanche diode[J].半导体学报（英文版）,2014,35(4):151-156,6.

基金项目

Project supported by the Jiangsu Provincial Natural Science Fund (No.BK2012559). （No.BK2012559）

半导体学报（英文版）

OACSCDCSTPCDEI

ISSN：1674-4926

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