爆破器材Issue(6)：1-6,6.DOI:10.3969/j.issn.1001-8352.2013.06.001
基于Al／MoOx纳米复合薄膜的含能半导体桥研究
Characterization of Energetic Semiconductor Bridge Realized by Integrating Al/MoOx Nano Multilayer Films
摘要
Abstract
An energetic semiconductor bridge, SCB-Al/MoOx, was made using Al/MoOx nano multilayer films integrated with semiconductor bridge ( SCB ) by micro machining technology and magnetron sputtering technology , and accordingly its ignition capacity was enhanced .The Al/MoOx films were identified by SEM , DSC and XPS.Results show that distinct Al/MoOx multilayer films are formed by means of sputter deposited on a layered geometry .The heat generation could reach to 3200 J/g, which is 68%of the theoretical value (4703 J/g).MoOx films contain MoO3(32%), Mo2O5 (37%) and MoO2(31%), respectively.In capacitance triggered firing experiments , the terminal time of SCB-Al/MoOx reaction is shorter , while the energy output efficiency is higher than those of SCB .Moreover, sparks in the fire increase obviously, and their duration time is extended .The exothermic reactions in Al/MoOx films sustain SCB to generate plasma of higher temperatures .关键词
Al/MoOx 纳米复合薄膜/含能半导体桥/点火起爆特性/等离子体测温Key words
Al/MoOxnano multilayer films/Energetic semiconductor bridge/Ignition character/Plasma temperature分类
军事科技引用本文复制引用
付帅,朱朋,叶迎华,李东乐,沈瑞琪..基于Al／MoOx纳米复合薄膜的含能半导体桥研究[J].爆破器材,2013,(6):1-6,6.基金项目
国家自然科学基金资助项目 （）
