传感技术学报Issue(6)：801-805,5.DOI:10.3969/j.issn.1004-1699.2013.06.009
基于SOI-MEMS工艺的谐振式压力传感器研究
Research of a Micromachined Resonant Pressure Sensor Based on SOI Wafer
摘要
Abstract
A micromachined resonant pressure sensor with H-type doubly-clamped beams was proposed based on electromagnetically driven and differentially detection methods. The beams were made of a SOI wafer’s single-crystal silicon device layer with low resistivity, which were also acted as the excited and sensed electrodes instead of commonly used metal layer electrodes. Finite element analysis was utilized to optimize the design of the pressure sensor. The sensor was fabricated by deep reactive ion etching process and buffered oxide etcher release process,and the vacuum package of the sensor was realized by anodic bonding. Experimental results show a sensitivity of 14. 96 Hz/hPa and linear correlation coefficient of 0. 999 996 in the range of 500 hPa to 1 100 hPa.关键词
微电子机械系统/谐振式压力传感器/绝缘体上硅/差分检测/阳极键合Key words
micro-electromechanical system( MEMS)/resonant pressure sensor/SOI/differentially detection/anodic bonding分类
信息技术与安全科学引用本文复制引用
曹明威,陈德勇,王军波,焦海龙,张健..基于SOI-MEMS工艺的谐振式压力传感器研究[J].传感技术学报,2013,(6):801-805,5.基金项目
地面高精度气压传感器产业化关键技术攻关(D111100001611002) （D111100001611002）
国家自然基金项目(61072022) （61072022）
