电子学报Issue(9)：1826-1830,5.DOI:10.3969/j.issn.0372-2112.2013.09.025
低温下EMCCD电子倍增模型
Electron Multiplication Model of EMCCD in Low Temperature
摘要
Abstract
To study the charge multiplying characteristic of an electron multiplying charge-coupled device(EMCCD) ,an ion-ization rate model is presented based on the impact-ionization theory .Aiming at two TI IMPACTRON EMCCD devices ,we develop a multiplication model at low fields using avalanche multiplication integral formula .Compared with the multiplication curves on the datasheets of both devices of TC285SPD and TC253SPD ,the calculated data from the model are taken as a reasonable fit to the ac-tual curves .A method is put forward to predict the amounts of signal passing through the multi-stage cascaded electron multiplication register containing a fixed-voltage gate ,which is useful to adjust and correct the gain of EMCCD devices .The model is suitable for lower temperature environment ,in which electron-multiplication technology can be applied to photon counting strategies .关键词
半导体器件/电荷耦合元件 (CCD )/低温/电子倍增/电离率/数学建模Key words
semiconductor devices/charge-coupled device(CCD)/low temperature/electron multiplication/ionization coef-ficient/mathematic model分类
信息技术与安全科学引用本文复制引用
胡泊,李彬华..低温下EMCCD电子倍增模型[J].电子学报,2013,(9):1826-1830,5.基金项目
国家自然科学基金委员会与中国科学院天文联合基金资助 （）
