电子学报Issue(11)：2242-2246,5.DOI:10.3969/j.issn.0372-2112.2013.11.020
基于 Savitzky-Golay 滤波器的M OSFET 阈值电压提取技术
A Technique for Extracting the Threshold Voltage of MOSFET Based on Savitzky-Gol ay Filter
摘要
Abstract
Originally from the noise and errors in measurement ,the fluctuations make the extraction of MOSFET’s threshold voltage unstable ,which will become worse in the case of the derivation operation .We proposed that the Savitzky-Golay filtering al-gorithm could be introduced into the derivation process in order to alleviate the influence of fluctuations effectively .A criterion for assessing the goodness of filtering was presented ,and then the extraction of threshold voltage of MOSFET could be achieved stably and automatically ,which will be in favor of the characterizing MOS devices and designing integrated circuits .关键词
金属氧化物半导体场效应晶体管/阈值电压/测量涨落/Savitzky-Golay滤波器Key words
mos field-effect transistor (MOSFET)/threshold voltage/measurement fluctuations/Savitzky-Golay filter分类
信息技术与安全科学引用本文复制引用
杨红官,朱坤顺,朱晓君..基于 Savitzky-Golay 滤波器的M OSFET 阈值电压提取技术[J].电子学报,2013,(11):2242-2246,5.基金项目
湖南省科技计划项目 （）
