东南大学学报（自然科学版）Issue(6)：1243-1247,5.DOI:10.3969/j.issn.1001-0505.2013.06.021
600VVDMOS器件的反向恢复热失效机理
Thermal failure mechanism of 600 V VDMOS during reverse recovery
摘要
Abstract
In order to study the failure mechanism of the body diode in a vertical double-diffused metal oxide semiconductor (VDMOS)device,the reverse-recovery phenomenon of the body diode in 600 V VDMOS is investigated in detail.The distributions of carrier density and temperature of the VDMOS during the forward conduction condition and reverse recovery condition are analyzed by the TCAD simulation tools.The simulation results show that lots of the minority carriers can be stored in the termination during the on-state mode of the body diode.When the diode switches from the for-ward conduction mode to the reverse blocking mode,the minority carriers stored in the termination will be removed as current in a single path.As a result,the temperature in the p-body region of the cell near the termination is increased,which leads to the increase of the base resistance in the parasit-ic bipolar and the decrease of the built-in potential of the emitter junction.The parasitic bipolar can be triggered and the VDMOS device fails.The analytical results agree with the measurements well.关键词
VDMOS/体二极管/反向恢复/热失效Key words
vertical double-diffused metal oxide semiconductor (VDMOS)/body diode/reverse recovery/thermal failure分类
信息技术与安全科学引用本文复制引用
夏晓娟,吴逸凡,祝靖,成建兵,郭宇锋,孙伟锋..600VVDMOS器件的反向恢复热失效机理[J].东南大学学报（自然科学版）,2013,(6):1243-1247,5.基金项目
国家自然科学基金资助项目（61274080）、江苏省自然科学基金资助项目（BK2011753）． （）
