高等学校化学学报Issue(3)：466-470,5.DOI:10.7503/cjcu20130620
InSb纳米线阵列的可控制备与光谱表征
Controlled Fabrication and Spectral Characterization of InSb Nanowire Arrays
摘要
Abstract
Zinc-blende-type InSb nanowire arrays with different growth orientations were synthesized in porous anodic alumina membrane by pulse electrodeposition. It is found that the growth orientation of InSb nanowires changes from [400] to [220] direction by controlling the concentration of sodium dodecyl sulfate(SDS) in the electrolyte. The phases and microstructure of the obtained nanowires were analyzed using powder X-ray diffraction, scanning electron microscopy and high-resolution transmission electron microscopy. The laser Raman spectra of the InSb nanowire arrays grown along different directions show distinctly different Raman features. Compared with the bulk materials, the phonon scattering peaks of the InSb nanowire arrays are severely red-shifted while its corresponding absorption band is blue-shifted.关键词
锑化铟/纳米线/拉曼光谱/红外吸收光谱Key words
InSb/Nanowire/Raman spectrum/Infrared absorbance spectrum分类
化学化工引用本文复制引用
杨友文,朱文斌,李天应,马东明,陈东..InSb纳米线阵列的可控制备与光谱表征[J].高等学校化学学报,2014,(3):466-470,5.基金项目
国家高技术研究发展计划(批准号:2013AA065502)、安徽省自然科学基金(批准号:11040606M52)和安徽省高校省级科学研究项目(批准号:KJ2011A21)资助.@@@@Supported by the National High Technology Research and Development Program of China(No.2013AA065502), the Anhui Provincial Natu-ral Science Foundation, China(No.11040606M52) and the Provincial Science Research Project of Universities of Anhui Province, China(No. KJ2011A21) （批准号:2013AA065502）
