摘要
Abstract
Based on the review of the development course, status of LLL image sensor, and tracking the development path of LLL image sensor in the near 10 years, this paper proposes the determination principle of a new generation of LLL image sensor and development direction. It also focuses on the latest progress of LLL image sensor including the CCD/CMOS with pre-intensified stage, such as the ICCD/CMOS and the EBCCD/COMS, solid-state LLL CCD/CMOS image sensor, CCD/CMOS hybrid image sensor, EMCCD, and InGaAs short wave infrared image sensor.关键词
微光夜视/像增强器/像传感器/LLLCCD/CMOS/CCD和CMOS混合/EMCCD/ICCD/CMOS/EBCCD/EBAPS/InGaAsKey words
LLL night vision/image intensifier/LLL image sensor/LLL CCD/CMOS/CCD and CMOS hybrid/EMCCD/ICCD/CMOS/EBCCD/EBAPS/InGaAs分类
信息技术与安全科学
