物联网技术Issue(1)：75-76,79,3.
GaN管芯射频功率放大器的研究
Research on RFPA with GaN dies
陈名 1赵学田1
作者信息
- 1. 杭州电子科技大学 电子信息学院，浙江 杭州 310018
- 折叠
摘要
Abstract
A design method of radio-frequency power ampliifer (RFPA) based on GaN dies is provided, which uses CGH60120D chip of CREE. And the ADS software is used to pull the load for die model to get the best impedance value. The matching circuit of the load and DC bias circuit are designed. Finally the whole circle system is simulated to make it reach the expect power value.关键词
GaN/负载牵引/射频/功率放大器/管芯Key words
GaN/load pull/radio-frequency/power ampliifer/die分类
信息技术与安全科学引用本文复制引用
陈名,赵学田..GaN管芯射频功率放大器的研究[J].物联网技术,2014,(1):75-76,79,3.
