物理学报Issue(20)：396-400,5.DOI:10.7498/aps.62.206801
退火温度和退火气氛对Ni/Au与p-GaN之间欧姆接触性能的影响
Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN
摘要
Abstract
In this paper, we investigate the effect of annealing conditions on the characteristic of Ni/Au Ohmic contact to p-GaN. The specific contact resistivities under different annealing temperature and different annealing atmosphere are tested using the circular transmission line model. It is found that the best annealing temperature is about 500 ◦C. The annealing atmosphere of nitrogen-oxygen gas mixture can lead to lower specific contact resistivity than that of pure nitrogen, and the specific contact resistivity has no relationship with the content of oxygen. Finally, we obtain the lowest specific contact resistivity to be 7.65 × 10−4Ω·cm2 at the best annealing temperature and atmosphere.关键词
p-GaN/欧姆接触/圆形传输线模型/快速热退火Key words
p-GaN/Ohmic contact/circular transmission line model/rapid thermal annealing引用本文复制引用
李晓静,江德生,赵德刚,何晓光,吴亮亮,李亮,杨静,乐伶聪,陈平,刘宗顺..退火温度和退火气氛对Ni/Au与p-GaN之间欧姆接触性能的影响[J].物理学报,2013,(20):396-400,5.基金项目
国家杰出青年科学基金(批准号:60925017)、国家自然科学基金(批准号:10990100,61176126)和清华大学信息科学与技术国家实验室(筹)学科交叉基金资助的课题.*Project supported by the National Science Fund for Distinguished Young Scholars of China (Grant No.60925017), the National Natural Science Foundation of China (Grant Nos.10990100,61176126), and the Cross-Discipline Foundation of Tsinghua National Laboratory for Information Science and Technology (TNList) Cross-Discipline Foundation, China （批准号:60925017）
