物理学报Issue(20)：546-551,6.DOI:10.7498/aps.62.208801
非晶硅锗电池性能的调控研究
Modification to the performance of hydrogenated amorphous silicon germanium thin film solar cell
摘要
Abstract
In this paper, we study hydrogenated amorphous silicon germanium thin film solar cells prepared by the radio frequency plasma-enhanced chemical vapor deposition. In the light of the inherent characteristics of hydrogenated amorphous silicon germanium mate-rial, the modulation of the germanium/silicon ratio in silicon germanium alloys can separately control open circuit voltage (Voc) and short circuit current density (Jsc) of a-SiGe:H thin film solar cells. By the structural design of band gap profiling in the amorphous silicon germanium intrinsic layer, hydrogenated amorphous silicon germanium thin film solar cells, which can be used efficiently as the component cell of multi-junction solar cells, are obtained.关键词
非晶硅锗薄膜太阳电池/短路电流密度/开路电压/带隙梯度Key words
hydrogenated amorphous silicon germanium solar cell/short circuit current density/open circuit voltage/band gap profiling引用本文复制引用
刘伯飞,白立沙,魏长春,孙建,侯国付,赵颖,张晓丹..非晶硅锗电池性能的调控研究[J].物理学报,2013,(20):546-551,6.基金项目
国家重点基础研究计划(批准号:2011CBA00706,2011CBA00707)、国家高技术研究发展计划(批准号:2013AA050302)、天津市科技支撑项目(批准号:12ZCZDGX03600)、天津市重大科技支撑计划(批准号:11TXSYGX22100)和高等学校博士学科点专项科研基金(批准号:20120031110039)资助的课题.*Project supported by the National Basic Research Program of China (Grant Nos.2011CBA00706,2011CBA00707), the National High Technology Research and Development Program of China (Grant No.2013AA050302), the Science and Technology Support Program of Tianjin, China (Grant No.12ZCZDGX03600), the Major Science and Technology Support Project of Tianjin, China (Grant No.11TXSYGX22100), and the Specialized Research Fund for the Doctor Program of Higher Education of China (Grant No.20120031110039) （批准号:2011CBA00706,2011CBA00707）
