物理学报Issue(21)：332-337,6.DOI:10.7498/aps.62.217301
基于AlGaN/GaN共振隧穿二极管的退化现象的研究
Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode
摘要
Abstract
In this paper we study theoretically the degradation phenomenon of GaN-based resonant tunneling diode (RTD). The effects of trapping centers on GaN-based RTD are calculated and studied by self-consistently solving the Poisson-Schr ¨odinger aligns when three experimentally obtained deep-level trapping centers are introduced into the AlGaN/GaN/AlGaN quantum well. Results show that the degradations of negative differential resistance (NDR) characteristic in GaN-based RTDs are actually caused by the combined action of the activation energy and the defect density. The deep-level trapping center with high activation energy plays a dominating role in the degradation of NDR characteristics because the probability of ionization is exponentially proportional to the activation energy.关键词
共振隧穿二极管/GaN/陷阱中心/电离率Key words
RTD/GaN/trapping centers/probability of ionization引用本文复制引用
陈浩然,杨林安,朱樟明,林志宇,张进成..基于AlGaN/GaN共振隧穿二极管的退化现象的研究[J].物理学报,2013,(21):332-337,6.基金项目
国家自然科学基金(批准号:61076079)和国家科技重大专项(批准号:2013ZX02308-002)资助的课题.@@@@Project supported by the National Natural Science Foundation of China (Grant No.61076079), and the National Science and Technology Major Project of the Ministry of Science and Technology of China (Grant No.2013ZX02308-002) （批准号:61076079）
