物理学报Issue(21)：396-403,8.DOI:10.7498/aps.62.218401
荷控忆阻器等效电路分析模型及其电路特性研究
Equivalent circuit analysis model of charge-controlled memristor and its circuit characteristics
摘要
Abstract
Memristor realized physically is recently a basic two-terminal circuit element with memory property. Based on Taylor series form ofϕ−q relationship, a charge-controlled memristor equivalent circuit analysis model is built. A charge-controlled memristor model with cubic nonlinearity is taken, as an example, to make a theoretical analysis of circuit characteristics, such as voltage-current relationship, active-passive property, and so on, of the charge-controlled memristor with different parameters. Results indicate that the voltage-current relationship of the charge-controlled memristor has an italic”8”shaped hysteresis loop characteristic, and the charge-controlled memristor shows passivity and activity accompanied with the variations of parameter symbols, resulting in the occurrence of the corresponding variations of circuit characteristics;compared with the passive memristor, the active memristor is more suitable for use as a second harmonic signal generation circuit. An experiment circuit is built based on the equivalent circuit of the charge-controlled memristor characteristic analysis, and the experimental results well verify the theoretical analysis.关键词
荷控忆阻器/等效电路/伏安关系/电路特性Key words
charge-controlled memristor/equivalent circuit/voltage-current relationship/circuit characteristics引用本文复制引用
胡丰伟,包伯成,武花干,王春丽..荷控忆阻器等效电路分析模型及其电路特性研究[J].物理学报,2013,(21):396-403,8.基金项目
国家自然科学基金(批准号:51277017)和江苏省自然科学基金(批准号:BK2012583)资助的课题.@@@@Project supported by the National Natural Science Foundation of China (Grant No.51277017), and the Natural Science Foundations of Jiangsu Province, China (Grant No BK2012583) （批准号:51277017）
