物理学报Issue(21)：452-459,8.DOI:10.7498/aps.62.218502
异质多晶SiGe栅应变Si NMOSFET物理模型研究
Study on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gate
摘要
Abstract
A new strained Si MOSFET structure with hetero-polycrystalline SiGe gate was studied, which combines the advantages of“gate engineering”and“strain engineering”. The new structure improved the carrier transport efficiency, suppressed the short-channel effects (SCE), and enhanced the performance on the basis of strain. Then a physically modeling strategy such as quasi-2D surface potential of strong inversion, threshold voltage, and channel current was presented for the strained Si NMOSFET. Finally, the above model was computed and the results were analyzed.关键词
异质多晶SiGe栅/应变Si NMOSFET/表面势/沟道电流Key words
hetero-polycrystalline SiGe gate/strained Si NMOSFET/surface potential/channel current引用本文复制引用
王斌,张鹤鸣,胡辉勇,张玉明,宋建军,周春宇,李妤晨..异质多晶SiGe栅应变Si NMOSFET物理模型研究[J].物理学报,2013,(21):452-459,8.基金项目
模拟集成电路国家重点实验室基金(批准号:P140c090303110c0904)、教育部博士点基金(批准号:JY0300122503)和中央高校基本业务费(批准号:K5051225014, K5051225004)资助的课题.@@@@Project supported by the NLAIC Research Fund (Grant No. P140c090303110c0904), the Research Fund for the Doctoral Program of Higher Edu-cation of China (Grant No. JY0300122503), and the Fundamental Research Funds for the Central Universities of China (Grant Nos. K5051225014, K5051225004) （批准号:P140c090303110c0904）
