物理学报Issue(22)：228502-1-228502-6,6.DOI:10.7498/aps.62.228502
基于ITO/聚甲基丙烯酸甲酯/Al的有机阻变存储器SPICE仿真
SPICE simulation of organic resistive memory with structure of ITO/polymethylmethacrylate/Al
摘要
Abstract
In this paper the resistive mechanism of the device with structure of ITO/PMMA/Al and the relevant SPICE simulation circuit are investigated. By optimizing the annealing temperature of PMMA, the devices can achieve continuous erasable-readable-writeable-readable operation. Based on the surface morphology researches of PMMA with different annealing temperatures, a physics model of nonlinear charge-drift mechanism in doping system is established to explain the resistance characteristics of the organic device. And the state equations are established to describe the interface movement of different doping regions in the model. Then, the SPICE simulation circuit is set up with feedback control integrator. Finally, substituting the measured parameters of device into the simulation circuit, we obtain the current-voltage simulation curve which is in good agreement with the actual results of the device. The results verify the resistance mechanism of nonlinear charge-drift in our device, and the applicability of the SPICE simulation of nonlinear charge-drift model based on inorganic memristors to the organic resistive memory.关键词
有机阻变存储器/非线性电荷漂移/SPICE仿真Key words
organic resistive memory/nonlinear charge-drift/SPICE simulation引用本文复制引用
容佳玲,陈赟汉,周洁,张雪,王立,曹进..基于ITO/聚甲基丙烯酸甲酯/Al的有机阻变存储器SPICE仿真[J].物理学报,2013,(22):228502-1-228502-6,6.基金项目
上海自然科学基金(批准号:09ZR1411900)、上海市科委(批准号:11100703200)和上海大学创新基金(批准号:sdcx2012063)资助的课题.*Project supported by the Shanghai Natural Science Funds, China (Grant No.09ZR1411900), the Shanghai Science and Technology Commission Project, China (Grant No.11100703200), and the Shanghai University Innovation Funds, China (Grant No. sdcx2012063) （批准号:09ZR1411900）
