物理学报Issue(24)：247401-1-247401-6,6.DOI:10.7498/aps.62.247401
Ge掺杂n型Sn基VIII型单晶笼合物的制备及热电传输特性
Growth and thermoelectric properties of Ge doped n-type Sn-based type-VIII single crystalline clathrate
摘要
Abstract
Single crystalline samples of type-VII Ba8Ga16-xGexSn30 (0 6 x 6 1.0) clathrates are fabricated by the Sn flux method. The structures and thermoelectric properties of the samples at temperatures ranging from 300 to 600 K are studied. Research results show that the actual content of Ge is relatively small in single crystal. The lattice parameters of the samples decrease slightly with the increase of the doping composition of Ge. The Ge doped samples have lower carrier density and higher carrier mobility than undoped samples. The Seebeck coefficients of all the doped samples are negative, and their absolute values are smaller than those of the undoped one. However, the electrical conductivity of the sample is increased by 62%after doping Ge and the sample of x=0.5 obtains a maximum value of ZT (1.25) at about 500 K.关键词
VIII型笼合物/n型传导/热电性能Key words
type-VIII clathrate/n-type conduction/thermoelectric properties引用本文复制引用
孟代仪,申兰先,晒旭霞,董国俊,邓书康..Ge掺杂n型Sn基VIII型单晶笼合物的制备及热电传输特性[J].物理学报,2013,(24):247401-1-247401-6,6.基金项目
国家自然科学基金(批准号:51262032)资助的课题.@@@@Project supported by the National Natural Science Foundation of China (Grant No.51262032) （批准号:51262032）
