物理学报Issue(24)：248502-1-248502-7,7.DOI:10.7498/aps.62.248502
一种平行栅碳纳米管阵列阴极的场发射特性研究
Field emission properties from a carbon nanotube array with parallel grid
摘要
Abstract
One of the models for the carbon nanotube array with parallel grids is proposed. The actual electric field at the top of the carbon nanotubes and the field enhancement factor are calculated analytically with the image charge method and floated sphere model. The effects of the geometrical parameters of the device and the contact resistance on actual electric field, field enhancement factor at the top of carbon nanotubes, and the field emission current from the gated carbon nanotubes are investigated. The calculation results show that the carbon nanotube array has the best density for field emission when the intertube distance is twice the height of carbon nanotube. The actual electric field and the field emission current from gated carbon nanotube are greatly reduced by the contact resistance. When the contact resistance is larger than 800 kΩ, the emission current from carbon nanotube tends to be zero and the field emission properties are improved via modulating gate voltage.关键词
平行栅碳纳米管阵列/悬浮球/场增强因子/接触电阻Key words
carbon nanotube array with parallel grid/floated sphere/field enhancement factor/contact resistance引用本文复制引用
雷达,孟根其其格,张荷亮,智颖飙..一种平行栅碳纳米管阵列阴极的场发射特性研究[J].物理学报,2013,(24):248502-1-248502-7,7.基金项目
国家自然科学基金(批准号:61261004)资助的课题.@@@@Project supported by the National Natural Science Foundation of China (Grant No.61261004) （批准号:61261004）
